Voltage-controlled TCR (Temperature Sensitivity) in Nanostructured Y0.95Ca0.05MnO3/Si, p-n Junction Diode

Abstract

The authors deposited a p-type Y_0.95Ca_0.05MnO₃ on the n-type Si substrate using chemical solution deposition and form nanostructured Y_0.95Ca_0.05MnO₃/n-Si, p-n junction diode with typical thickness of about 100 nm with polycrystalline in nature. The diode exhibits rectifying properties over the temperature range of 100–300 K. Voltage-dependent temperature sensitivity of Y_0.95Ca_0.05MnO₃/n-Si, p-n junction diode has been studied in current perpendicular to film plane (CPP) geometry. The maximum percentage of TCR values of −5.24% K⁻¹ at 200 K at applied diffusive potential below 1 V can be understood in terms of diffusive voltage-dependent conduction through the interface of nanostructured p-n junction diode.

Keywords: PN junction diode, TCR, multiferroic