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Effect of Aluminium Mole Fraction on the AlGaN/GaN HEMTs with 10 nm AlGaN Nano-Layer

Sanjib Kalita, Subhadeep Mukhopadhyay

Abstract


We report the effect of aluminium mole fraction on drain current in AlGaN/GaN high electron mobility transistors (HEMTs). The drain current increases with the drain voltage. Also, the effect of gate voltage on drain current as well as the effect of drain voltage on source current is studied. The drain current is invariant and nearly 0 mA corresponding to the aluminium mole fractions of 0.10, 0.15, 0.20, and 0.25 related to the gate voltage of –2 V. The source current increases with drain voltage. This study may be useful to design the HEMT structures.

Keywords: Mole fraction, drain current, drain voltage, gate voltage

Cite this Article

Sanjib Kalita, Subhadeep Mukhopadhyay. Effect of Aluminium Mole Fraction on the AlGaN/GaN HEMTs with 10 nm AlGaN Nano-Layer. Journal of Microelectronics and Solid State Devices. 2016; 3(3): 15–21p.


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