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Bandgap Analysis of Quasi Bandgap Semiconductor Using FDTD Technique

Gopinath Palai, C.S. Mishra, K. K. Sethi

Abstract


In this work photonic bandgap analysis of boron nitride (BN) quasi bandgap semiconductor is investigated using finite difference time domain (FDTD) method. Here boron nitride semiconductor is cogitated as a-BN, h-BN, c-BN and w-BN semiconductor, where boron nitride is realized by the combination of two BN semiconductor layers separated by air. Simulation for photonic bandgap of the aforementioned semiconductor structure is carried out with respect to thickness of  odd and even layers where photonic bandgap is computed using dispersion diagram, whereas dispersion relation is computed for thickness of (100 nm, 900 nm) , (300 nm, 700 nm), (600 nm, 400 nm) and (900 nm, 100 nm) of odd  and  even layer respectively.  Simulation results showed that photonic band gap (PBG) is differed for different thickness of odd and even layers of a-BN, h-BN, c-BN and w-BN semiconductor. Finally it is inferred that PBG of all BN semiconductor varies randomly with respect to thickness of the above layers.

Keywords: Quasi bandgap semiconductor, Boron nitride, FDTD

Cite this Article

C.S. Mishra, K.K. Sethi, G. Palai. Bandgap analysis of quasi bandgap semiconductor using FDTD technique. Journal of Microelectronics and Solid State Devices, 2015; 2(2): 1–4p.


 


References


G.Palai,S.K.Tripathy; A novel method for measurement of concentration using two dimensional photonic crystal structures;Optics Communications, Volume 285, Issues 10–11, 15 May 2012, Pages 2765-2768

G. Palai, S.K.Tripathy, N.Muduli, S.K.Patnaik,D.Patnaik.; A novel method to measure the strength of CygelTM by using two dimensional photonic crystal struct ures; Citation: AIP Conf. Proc. 1461, 383-386 (Dec.2011).

Claus F. Klingshirn (1997). Semiconductor optics. Springer. p. 127. ISBN 3-540-61687-X.

Safa O. Kasap, Peter Capper (2006). Springer handbook of electronic and photonic materials. Springer. pp. 54,327. ISBN 0-387-26059-5.

Milton Ohring Reliability and failure of electronic materials and devices Academic Press, 1998 ISBN 0-12-524985-3, p. 310

M. Topsakal, E. Aktürk, and S. Ciraci’’First-principles study of two- and one-dimensional honeycomb structures of boron nitride ‘’Phys. Rev. B 79, 115442 – Published 30 March 2009, http://dx.doi.org/10.1103/PhysRevB.79.115442

X. Blase, A. Rubio, S. G. Louie and M. L. Cohen, X. Blase Stability and Band Gap Constancy of Boron Nitride Nanotubes etal 1994 Europhys. Lett. 28 335. doi:10.1209/0295-5075/28/5/007Received 6 June 1994

I.A. Sukhoivanov, I.V. Guryev, “Physics and Practical Modeling: Photonic Crystals,” Springer, Heidelberg, 2009.


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