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Novel Effect of Gate Length on the Electrical Characteristics of Nanoelectronic Double-Heterojunction HEMTs with the Circuit Symbols and Load Line to Configure the Common-Source Amplifiers in Analog Electronics

Subhadeep Mukhopadhyay, Sanjib Kalita

Abstract


Total 3566 individual simulation-outputs are reported in this work. The linear region and saturation region in each drain characteristic curve of nanoelectronic AlGaN/GaN/AlGaN double-heterojunction high electron mobility transistors (HEMTs) are clearly shown. In this work, we have obtained the maximum drain current of 389 mA using these HEMTs. The investigations on the dependence of drain current with respect to gate length in these double-heterojunction HEMTs is a novelty of this work. The conduction band engineering in these double-heterojunction HEMTs are investigated in detail as another novelty of this work. Also, the circuit symbols of the single-heterojunction HEMTs and double-heterojunction HEMTs are proposed as another novelty of this work. The electrical performance of the common-source amplifier using these double-heterojunction HEMTs is graphically and approximately presented as another novelty of this work. The set of simulation studies in this work will be helpful to experimentally fabricate the common-source amplifiers using the nanoelectronic HEMTs in analog electronics.

Cite this Article. Subhadeep Mukhopadhyay, Sanjib Kalita. Novel Effect of Gate Length on the Electrical Characteristics of Nanoelectronic Double-Heterojunction HEMTs with the Circuit Symbols and Load Line to Configure the Common-Source Amplifiers in Analog Electronics. Research & Reviews: A Journal of Embedded System & Applications. 2017; 5(2): 8–18p.


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