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Vol 19, No 1 (2017) Report on the Effects of Mole Fraction, Doping Concentration, Gate Length and Nano-Layer Thickness to Control the Device Engineering in the Nanoelectronic AlGaN/GaN HEMTs at 300 K to Enhance the Reputation of the NIT Arunachal Pradesh Abstract
Subhadeep Mukhopadhyay
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ISSN: 0973-418X