Specific Contact Resistance of CuxO Thin Films Deposited by r. f. Sputtering Method

Autores/as

  • Dr. Jayanta Pal Department of Physics, Dr. B. C. Roy Engineering College, Jemua Road, Fuljhore, Durgapur- 713206, West Bengal, India

Palabras clave:

CuxO thin films, contact resistivity, bulk resistivity

Resumen

This paper contains measurement of contact resistivity and bulk resistivity of CuxO (0<x<1) thin films deposited by r. f. sputtering method. The conditions for deposition of CuxO thin film were optimized by varying the r. f. power to vary the contact resistivity and bulk resistivity. Electrical characterizations were performed by Transmission Line Model (TLM) and Vertical Transmission Model (VTM) studies. The films deposited on glass substrate have contact resistivity in the range 2.53 - 15 W-cm2 and bulk resistivity in the range 0.35 - 0.96 W-cm.  Keywords: CuxO thin films, contact resistivity, bulk resistivity

Biografía del autor/a

  • Dr. Jayanta Pal, Department of Physics, Dr. B. C. Roy Engineering College, Jemua Road, Fuljhore, Durgapur- 713206, West Bengal, India
    Department: Physics,Rank: Assistant Professor

Publicado

2012-11-30

Número

Sección

Research Articles