Specific Contact Resistance of CuxO Thin Films Deposited by r. f. Sputtering Method

Autori

  • Dr. Jayanta Pal Department of Physics, Dr. B. C. Roy Engineering College, Jemua Road, Fuljhore, Durgapur- 713206, West Bengal, India

Parole chiave:

CuxO thin films, contact resistivity, bulk resistivity

Abstract

This paper contains measurement of contact resistivity and bulk resistivity of CuxO (0<x<1) thin films deposited by r. f. sputtering method. The conditions for deposition of CuxO thin film were optimized by varying the r. f. power to vary the contact resistivity and bulk resistivity. Electrical characterizations were performed by Transmission Line Model (TLM) and Vertical Transmission Model (VTM) studies. The films deposited on glass substrate have contact resistivity in the range 2.53 - 15 W-cm2 and bulk resistivity in the range 0.35 - 0.96 W-cm.  Keywords: CuxO thin films, contact resistivity, bulk resistivity

Biografia autore

  • Dr. Jayanta Pal, Department of Physics, Dr. B. C. Roy Engineering College, Jemua Road, Fuljhore, Durgapur- 713206, West Bengal, India
    Department: Physics,Rank: Assistant Professor

Dowloads

Pubblicato

2012-11-30

Fascicolo

V. 3 N. 3 (2012)

Sezione

Research Articles

Licenza

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