A Comparative Study on Carbon Nanotube MOSFET, Silicon Nanowire MOSFET and Single Gate MOSFET

Forfattere

  • Md Razuan Hossain Lecturer
  • Md. Razuan Hossain

Nøgleord:

carbon nanotube MOSFET, silicon nanowire MOSFET, single gate MOSFET, quantum capacitance, mobility charge density.

Resumé

Among many of the concerns for the researchers in nano-electronics, Single Gate MOSFET, Silicon Nanowire MOSFET and Carbon Nanotube MOSFET were very popular three. All of them are different in their structures and performance. This paper is focused on the comparison of their characteristics in terms of Current- voltage relations, Mobility charge density and Quantum capacitance. ‘FETToy’ in ‘nanohub’ was used to simulate the predefined models in room temperature. Drain and Gate control parameters were kept same for all of them.    Keywords: Carbon Nanotube MOSFET, Silicon Nanowire MOSFET, Single Gate MOSFET, Quantum capacitance, Mobility charge density  Cite this Article Mukit Ahmed Chowdhury, Md. Razuan Hossain. A Comparative Study on Carbon Nanotube MOSFET, Silicon Nanowire MOSFET and Single Gate MOSFET. Journal of Electronic Design and Technology(JoEDT). 2015; 6(2):   7-12p.  

Forfatterbiografi

  • Md Razuan Hossain, Lecturer
    Lecturer in EEE at European University of Bangladesh

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Publiceret

2015-07-09

Nummer

Årg. 6 Nr. 2 (2015)

Sektion

Research Articles

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