Modeling and Performance Analysis of Gallium Arsenide Based P-I-N Solar Cells

著者

  • Md Razuan Hossain Lecturer

キーワード:

Fill factor、 Efficiency、 Doping、 Intrinsic.

要旨

Current technology has made a lot of inspection and also facing many difficulties for optimizing a solar cell’s efficiency. Many previous works had been done on p-n junction solar cells to achieve the maximum performance. But a few researches show us that the performance of p-i-n solar cell has not yet reached its optimum level. Thus in this paper we concentrate on an analysis of Gallium Arsenide based p-i-n solar cell and achieve the maximum efficiency of a Gallium Arsenide based p-i-n solar cell. In this paper we ascertain a specific method to virtually design a Gallium Arsenide p-i-n solar cell and analyse its efficiency at different doping concentrations using device simulator. After doing rigorous analysis a maximum efficiency of 17.56 % was achieved for Gallium Arsenide solar cell. In this methodology we have perceived the foremost implementation of the unit cell in several doping concentrations. In this paper a comparison was made on the performance of Gallium Arsenide based p-i-n solar cell and suitable results were achieved.     Keywords:fill factor, efficiency,doping, intrinsicCite this Article Md. Razuan Hossain, Farhan S Chowdhury, Md. Al-Mamun Sabuz. Modeling and Performance Analysis of Gallium Arsenide Based P-I-N Solar Cells, Journal of Electronic Design and Technology. 2015; 6(2): 23-27p.  

著者略歴

  • Md Razuan Hossain、 Lecturer
    Lecturer in EEE at European University of Bangladesh

発行日

2015-07-09

巻号

セクション

Research Articles