Impact of Spacer Engineering on SOI Junctionless FET Performance Using TCAD Simulation

Autores/as

  • P. Sasikala
  • Priscilla Scarlet Department of Information Technology, Sri Sivasubramaniya Nadar College of Engineering, Chennai, India
  • K.K. Nagarajan Department of Electronics and Communication Engineering, Sri Sivasubramaniya Nadar College of Engineering, Chennai, India
  • R. Srinivasan Department of Information Technology, Sri Sivasubramaniya Nadar College of Engineering, Chennai, India

Palabras clave:

Planar, TCAD, fT, SOI junctionless FET, high-k, buried oxide (BOX)

Resumen

In this paper, the impact of spacer engineering on 10 nm gate length planar SOI (Silicon On Insulator) junctionless transistor performance is studied using Sentaurus TCAD simulator. Spacer length and spacer permittivity of the device are taken as two controllable parameters. DC performance metrics, ION, IOFF, ION/IOFF ratio, unity gain frequency (fT) and non quasi static delay (NQS) are investigated for various spacer lengths and spacer permittivity. The simulation results suggest that with high-k spacer and with minimum spacer length better ION/IOFF ratio can be achieved. fT (unity gain frequency) decreases at higher spacer lengths and at higher permittivity values. Phase delay increase with increase in frequency.Cite this Article Sasikala P, Priscilla Scarlet, Nagarajan KK, Srinivasan R. Impact of Spacer Engineering on SOI Junctionless FET Performance Using TCAD Simulation. Journal of Materials & Metallurgical Engineering. 2016; 6(2): 42–52p. 

Descargas

Publicado

2016-07-28

Número

Vol. 6 Núm. 2 (2016)

Sección

Research Articles

Licencia

Declaration and Copyright Transfer Form

(to be completed by authors)

 

I/ We, the undersigned author(s) of the submitted manuscript, hereby declare, that the above manuscript which is submitted for publication in the STM Journals(s), is not published already in part or whole (except in the form of abstract) in any journal or magazine for private or public circulation, and, is not under consideration of publication elsewhere.

·         I/We will not withdraw the manuscript after 1 week of submission as I have read the Author Guidelines and will adhere to the guidelines.

·         I/We Author(s ) have niether given nor will give this manuscript elsewhere for publishing after submitting in STM Journal(s).

·         I/ We have read the original version of the manuscript and am/ are responsible for the thought contents embodied in it. The work dealt in the manuscript is my/ our own, and my/ our individual contribution to this work is significant enough to qualify for authorship.

·          I/We also agree to the authorship of the article in the following order:

Author’s name                                    

 

1. ________________

2. ________________

3. ________________

4. _______________

 

We  Author(s) tick this box and would request you to consider it as our signature as we agree to the terms of this Copyright Notice, which will apply to this submission if and when it is published by this journal.