A Technological Review on Quantum Ballistic Transport Model Based Silicon Nanowire Field Effect Transistors for Circuit Simulation and Design

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  • Mayank Chakraverty IBM India Private Limited, Bangalore, India
  • Kinshuk Gupta
  • Vinay G Babu
  • Vaibhav Meshra Meshram

Klíčová slova:

Nanowire, scaling, MOSFET, VLS, nanoelectronics, short channel effects (SCEs), density of states, SiNWFET

Abstrakt

Nanowire MOSFETs are recognized as one of the most promising candidates to extend Moore’s law into nanoelectronics era. This paper reviews the process, application, device physics and compact modeling of Gate All around (GAA) nanowire MOSFETs. The most widely used methods of nanowire synthesis have been discussed. The paper presents the various device optimization techniques and scaling potential of nanowire transistors. A process sensitivity study of silicon nanowire transistors at the end of the paper justifies the theory of nanowire FETs to carry forward the downscaling of MOSFETs in the sub-10 nm regime.  Keywords: Nanowire, scaling, MOSFET, VLS, nanoelectronics, short channel effects (SCEs), density of states, SiNWFET   Cite this Article Chakraverty Mayank, Gupta Kinshuk, Babu Vinay G. et al. A Technological Review on Quantum Ballistic Transport Model Based Silicon Nanowire Field Effect Transistors for Circuit Simulation and Design. Journal of Nanoscience, Nanoengineering and Applications. 2015; 5(2): 20–31p.

Biografie autora

  • Mayank Chakraverty, IBM India Private Limited, Bangalore, India

Stažení

Publikováno

2015-07-17

Číslo

Vol 5 No 2 (2015)

Sekce

Review Articles

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