Detailed Study of Working and Applications of FinFET Technology and Its Adaptability in Current Era
Klíčová slova:
Silicon on insulator (SOI), short channel effect (SCE) [2], buried oxide (BOX)Abstrakt
The CMOS technology is following Moore’s law since almost 25 years. The scaling of CMOS transistor has increased packaging density, speed and decreased power dissipation in the integrated circuits. However, CMOS dimension when scaled to nanometer dimension, many physical barriers arise. In sub-100 nm scale, MOSFET has new variants as SOI implementation and double gate.Publikováno
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