Design and Implementation of Low Noise Amplifier using 90 nm MOS Technology for Bluetooth

Forfattere

  • Vimal Zalariya Institute of Technology, Nirma University, Ahmedabad, Gujarat, India
  • Nikunj Marodiya Institute of Technology, Nirma University, Ahmedabad, Gujarat, India
  • Akash Mecwan Institute of Technology, Nirma University, Ahmedabad, Gujarat, India

Nøgleord:

LNA, RF Front End, Low Noise, Noise Figure.

Resumé

In the era of Miniaturization it is necessary that analog field develops at par with the digital world. To design RF circuit on the single chip it is necessary that noise performance of active semiconductor devices are studied and configure the devices in such a way that noise gets minimized. In this paper various kinds of noise in the devices are explained at a brief. Low Noise Amplifier for Bluetooth band is designed and layout is formed. Design of reactive components like capacitors and inductors is also presented in this paper.  Keywords: LNA, RF Front end, Low noise, Noise figure

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Publiceret

2014-12-13

Nummer

Årg. 4 Nr. 3 (2014)

Sektion

Research Articles

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