Memristor Modelling for Common Source Amplifier Using 180 nm Technology

Forfattere

  • Herman Al Ayubi School of Information & Communication Technology, Gautam Buddha University, Greater Noida, U.P., India
  • Navaid Z. Rizvi School of Information & Communication Technology, Gautam Buddha University, Greater Noida, U.P., India
  • Piyush Kumar Mishra School of Information & Communication Technology, Gautam Buddha University, Greater Noida, U.P., India

Resumé

The objective of this research paper is on memristor modeling for common source amplifier circuit using cadence virtuoso tool at gpdk 180 nm technology. A memristor is the fourth element count after resistor, inductor and capacitor in fundamental electrical circuits assumption is proposed by Leon Chua, its characteristics is based on already occurred principles of voltages (V), current (I), flux (ᵩ) and charge (q). Ohm’s law states relation voltage to current is directly proportional by (V=IR), charge is directly proportional to voltage (q=CV), and relation between current to flux (φ=LI) and, as above equations represents that connection between flux (ᵩ) and the charge (q).   Keywords: GPDK (generic process design kit), TEAM (ThrEshold adaptive memristor), memristors, SMCS (single memristor common source amplifier), DMCS (double memristor common source amplifier) The objective of this research paper is on memristor modeling for common source amplifier circuit using cadence virtuoso tool at gpdk 180 nm technology. A memristor is the fourth element count after resistor, inductor and capacitor in fundamental electrical circuits assumption is proposed by Leon Chua, its characteristics is based on already occurred principles of voltages (V), current (I), flux (ᵩ) and charge (q). Ohm’s law states relation voltage to current is directly proportional by (V=IR), charge is directly proportional to voltage (q=CV), and relation between current to flux (φ=LI) and, as above equations represents that connection between flux (ᵩ) and the charge (q).   Cite this Article Al Ayubi Herman, Rizvi Navaid Z, Mishra Piyush Kumar. Memristor Modelling for Common Source Amplifier using 180 nm Technology. Journal of VLSI Design Tools and Technology. 2015; 5(3): 45–54p.

Downloads

Publiceret

2015-10-12

Nummer

Årg. 5 Nr. 3 (2015)

Sektion

Research Articles

Licens

Declaration and Copyright Transfer Form

(to be completed by authors)

 

I/ We, the undersigned author(s) of the submitted manuscript, hereby declare, that the above manuscript which is submitted for publication in the STM Journals(s), is not published already in part or whole (except in the form of abstract) in any journal or magazine for private or public circulation, and, is not under consideration of publication elsewhere.

·         I/We will not withdraw the manuscript after 1 week of submission as I have read the Author Guidelines and will adhere to the guidelines.

·         I/We Author(s ) have niether given nor will give this manuscript elsewhere for publishing after submitting in STM Journal(s).

·         I/ We have read the original version of the manuscript and am/ are responsible for the thought contents embodied in it. The work dealt in the manuscript is my/ our own, and my/ our individual contribution to this work is significant enough to qualify for authorship.

·          I/We also agree to the authorship of the article in the following order:

Author’s name                                    

 

1. ________________

2. ________________

3. ________________

4. _______________

 

We  Author(s) tick this box and would request you to consider it as our signature as we agree to the terms of this Copyright Notice, which will apply to this submission if and when it is published by this journal.