Implementation of Low Power Shift Registers Using Multi-Threshold CMOS Technique

Autores/as

  • Archana Kumari Department of Electronics and Communication Engineering, Bahra University, Shimla-Hills, HP, India
  • Navdeep Prashar Department of Electronics and Communication Engineering, Bahra University, Shimla-Hills, HP, India

Palabras clave:

Shift register, dual-edge triggered, flip-flop, low power, multi-threshold CMOS.

Resumen

This paper enumerates the design of low power shift registers using dual-edge triggered flip-flop (DETFF). In the conventional shift registers, high leakage current is becoming a significant contributor to power dissipation. In order to overcome this problem, the multi-threshold complementary metal oxide semiconductor (MTCMOS) technology is used for leakage minimization in proposed designs. This technology features both low-threshold and high-threshold voltage MOSFETs. High-threshold voltage MOSFETs reduced the stand-by leakage current during the sleep mode. The conventional and proposed shift registers are presented and compared. The result shows a significant reduction in power as compared to the conventional shift registers. The shift register has been designed and simulated by using tanner v13.0 tools.  Keywords: Shift register, dual-edge triggered, flip-flop, low power, multi-threshold CMOSCite this Article Archana Kumari, Navdeep Prashar. Implementation of Low Power Shift Registers Using Multi-Threshold CMOS Technique. Journal of VLSI Design Tools and Technology. 2016; 6(2):     53–61p.

Descargas

Archivos adicionales

Publicado

2016-07-06

Número

Vol. 6 Núm. 2 (2016)

Sección

Research Articles

Licencia

Declaration and Copyright Transfer Form

(to be completed by authors)

 

I/ We, the undersigned author(s) of the submitted manuscript, hereby declare, that the above manuscript which is submitted for publication in the STM Journals(s), is not published already in part or whole (except in the form of abstract) in any journal or magazine for private or public circulation, and, is not under consideration of publication elsewhere.

·         I/We will not withdraw the manuscript after 1 week of submission as I have read the Author Guidelines and will adhere to the guidelines.

·         I/We Author(s ) have niether given nor will give this manuscript elsewhere for publishing after submitting in STM Journal(s).

·         I/ We have read the original version of the manuscript and am/ are responsible for the thought contents embodied in it. The work dealt in the manuscript is my/ our own, and my/ our individual contribution to this work is significant enough to qualify for authorship.

·          I/We also agree to the authorship of the article in the following order:

Author’s name                                    

 

1. ________________

2. ________________

3. ________________

4. _______________

 

We  Author(s) tick this box and would request you to consider it as our signature as we agree to the terms of this Copyright Notice, which will apply to this submission if and when it is published by this journal.