A High Performance Reference Circuit with Optimized Input Offset Operational Amplifier using Device Mismatch Model

Autori

  • Kapil K Rajput Semiconductor Bussiness Unit Tata Elxsi India Pvt. Ltd.
  • Sanjay Singh CSIR-Central Electronics Engineering Research Institute
  • Ravi Saini CSIR-Central Electronics Engineering Research Institute
  • Anil K Saini CSIR-Central Electronics Engineering Research Institute

Parole chiave:

CMOS bandgap reference, MOSFET mismatch modeling, operational amplifier, input offset voltage

Abstract

In this paper, author describes a band gap reference (BGR) circuit, having reference voltage 1.20V with maximum temperature coefficient of 63 ppm/0C in temperature range of –40 to 120  0C. The circuit operates in range of supply voltage, 3.0V to 3.6V. An operational amplifier (op-amp), whose input offset voltage is reduced upto 892 µV using Pelgrom’s device mismatch model is used in BGR. The power supply rejection ratio of circuit is improved at higher frequency and achieved 36 dB at 1 MHz. The circuit having area of 0.45 mm2 in 0.35 µm CMOS technology is designed, fabricated and tested successfully.

Biografie autore

  • Kapil K Rajput, Semiconductor Bussiness Unit Tata Elxsi India Pvt. Ltd.
    Analog Circuit Design EngineerSemiconductor Bussiness UnitTata Elxsi India Pvt. Ltd.
  • Sanjay Singh, CSIR-Central Electronics Engineering Research Institute
    IC Design GroupCSIR-CEERIPilani
  • Ravi Saini, CSIR-Central Electronics Engineering Research Institute
    IC Design GroupCSIR-CEERIPilani
  • Anil K Saini, CSIR-Central Electronics Engineering Research Institute
    IC Design GroupCSIR-CEERIPilani

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Pubblicato

2013-04-15

Fascicolo

V. 3 N. 1 (2013)

Sezione

Research Articles

Licenza

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