Designing of GaAs Based Resonant Tunneling Diode and Nano Scale Applications with Considering NEGF

Autori

  • Mehedi Hasan Department of Electrical and Electronic Engineering, American International University, Bangladesh
  • Md. Kamrul Hassan Department of Electrical and Electronic Engineering, American International University, Bangladesh
  • Md. Tanseer Ali Department of Electrical and Electronic Engineering, American International University, Bangladesh

Abstract

Present situation of eletronic area in the world required small devices as well as low power dissipation and ultra high speed application. At this moment the presence of resonant tunneling diode can over come this type of problem and take a big role in nanoscale digital and analog applications.In this researh article is to demonestrated effect of asymmetric barrier with respect to symmetric barrier and digital inverter and THz analog oscillator applications for Thomas-Fermi and Hartree model by introducing Hspice simulation and NEMO5 (Nano Electronic Modelling) by considering NEGF (non-equilibrium Greens function). And 2-DEG HEMT (two-dimensional electron gas, high-electron-mobility-transistors) concept to understanding variation of RTD (Resonant tunneling diodes) parameter effect of sheet charge density at interface of RTD to be demonestrated.Also studied comparative analysis between single barrier and double barrier performance.In this article obtained Double barrier RTD dominated compare to single barrier RTD. Keywords: Resonant tunneling diodes, NEGF, lorentzian approximation, HEMT, HSPICE, NEMO5, DEG, PDR1, PDR2, NDR, assymmetric barrier, sheet charge density, resonance energy Cite This Article Mehedi Hasan, Md. Kamrul Hassan, M.Tanseer Ali. Designing of GaAs Based Resonant Tunneling Diode and Nano Scale Applications with Considering NEGF, Journal of VLSI Design Tools and Technology (JoVDTT). 2015; 5(1): 1–18p.

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Pubblicato

2015-02-11

Fascicolo

V. 5 N. 1 (2015)

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Research Articles

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