Effect of Doping and Crystal Orientation on Channel Current for Multigate Si Nanowire FET

Autori

  • Habib Muhammad Nazir Ahmad Department of Electrical and Electronic Engineering, Faculty of Engineering, American International University-Bangladesh, Bangladesh
  • Mustafa Mohammad Shaky Department of Electrical and Electronic Engineering, Faculty of Engineering, American International University-Bangladesh, Bangladesh

Abstract

This manuscript investigates the effects on channel current by varying gate orientation as well as channel doping concentration for Si nanowire FET. Both gate and drain voltage biasing are considered here for showing variations in channel current. After analyzing simulation results for silicon 100 and 110 crystal orientation it has been found that gate all around and top gate only show significant increment in channel current on different occasions over other gate structures.   Keywords: FinFET, NWFET, GAA, multi gate Cite this Article Habib Muhammad Nazir Ahmad, Mustafa Mohammad Shaky. Effect of Doping and Crystal Orientation on Channel Current for Multigate Si Nanowire FET. Journal of VLSI Design Tools & Technology. 2017; 7(2):       20–29p.

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Pubblicato

2017-07-13

Fascicolo

V. 7 N. 2 (2017)

Sezione

Research Articles

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