Detailed Study of Working and Applications of FinFET Technology and Its Adaptability in Current Era
Ключевые слова:
Silicon on insulator (SOI), short channel effect (SCE) [2], buried oxide (BOX)Аннотация
The CMOS technology is following Moore’s law since almost 25 years. The scaling of CMOS transistor has increased packaging density, speed and decreased power dissipation in the integrated circuits. However, CMOS dimension when scaled to nanometer dimension, many physical barriers arise. In sub-100 nm scale, MOSFET has new variants as SOI implementation and double gate.Опубликован
Выпуск
Раздел
Лицензия
Declaration and Copyright Transfer Form
(to be completed by authors)
I/ We, the undersigned author(s) of the submitted manuscript, hereby declare, that the above manuscript which is submitted for publication in the STM Journals(s), is not published already in part or whole (except in the form of abstract) in any journal or magazine for private or public circulation, and, is not under consideration of publication elsewhere.
· I/We will not withdraw the manuscript after 1 week of submission as I have read the Author Guidelines and will adhere to the guidelines.
· I/We Author(s ) have niether given nor will give this manuscript elsewhere for publishing after submitting in STM Journal(s).
· I/ We have read the original version of the manuscript and am/ are responsible for the thought contents embodied in it. The work dealt in the manuscript is my/ our own, and my/ our individual contribution to this work is significant enough to qualify for authorship.
· I/We also agree to the authorship of the article in the following order:
Author’s name
1. ________________
2. ________________
3. ________________
4. _______________
We Author(s) tick this box and would request you to consider it as our signature as we agree to the terms of this Copyright Notice, which will apply to this submission if and when it is published by this journal. |
