Design and Implementation of Low Noise Amplifier using 90 nm MOS Technology for Bluetooth

Авторы

  • Vimal Zalariya Institute of Technology, Nirma University, Ahmedabad, Gujarat, India
  • Nikunj Marodiya Institute of Technology, Nirma University, Ahmedabad, Gujarat, India
  • Akash Mecwan Institute of Technology, Nirma University, Ahmedabad, Gujarat, India

Ключевые слова:

LNA, RF Front End, Low Noise, Noise Figure.

Аннотация

In the era of Miniaturization it is necessary that analog field develops at par with the digital world. To design RF circuit on the single chip it is necessary that noise performance of active semiconductor devices are studied and configure the devices in such a way that noise gets minimized. In this paper various kinds of noise in the devices are explained at a brief. Low Noise Amplifier for Bluetooth band is designed and layout is formed. Design of reactive components like capacitors and inductors is also presented in this paper.  Keywords: LNA, RF Front end, Low noise, Noise figure

Загрузки

Опубликован

2014-12-13

Выпуск

Том 4 № 3 (2014)

Раздел

Research Articles

Лицензия

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