Detailed Study of Working and Applications of FinFET Technology and Its Adaptability in Current Era

作者

  • Manan Sheth
  • Shivang Bakliwal
  • Shival Trivedi
  • Dhaval Shah

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Silicon on insulator (SOI)##common.commaListSeparator## short channel effect (SCE) [2]##common.commaListSeparator## buried oxide (BOX)

摘要

 The CMOS technology is following Moore’s law since almost 25 years. The scaling of CMOS transistor has increased packaging density, speed and decreased power dissipation in the integrated circuits. However, CMOS dimension when scaled to nanometer dimension, many physical barriers arise. In sub-100 nm scale, MOSFET has new variants as SOI implementation and double gate. 

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出版日期

2012-12-20

期號

卷 2 期 3 (2012)

分類

Research Articles

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