Effects of Variation of Active Region Radius on the Performance Characteristics of a Designed 1550 nm Al0.09Ga0.38In0.53As/InP MQW VCSEL

Auteurs-es

  • Rashel Kabir Department of Electrical and Electronic Engineering, American International University-Bangladesh (AIUB), Banani, Dhaka-1213, Bangladesh

Mots-clés :

VCSEL, MQW, relative response, active region radius

Résumé

In this work, the performance characteristics of a designed Al0.09Ga0.38In0.53As/InP based 1550 nm top emitting multi quantum well (MQW) vertical cavity surface emitting laser (VCSEL) has been obtained. By evaluating the attained result of different parameters of selected MQW VCSEL the peak material gain is obtained as 1652.3 cm-1. For 6.1 mA of injection current and 5.65 μm of active region radius, the optical output power of 31.37 dBm and the resonance frequency of 5.4 GHz are obtained. Further by decreasing the active region radius from 5.65 to 3.65 μm a maximum resonance frequency of 8.6 GHz and the corresponding modulation bandwidth of 13.12 GHz are obtained which makes the laser capable for transmitting data at high speed through optical fiber.Keywords: VCSEL, MQW, relative response, active region radius

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Publié

2014-12-09

Numéro

Vol. 4 No. 3 (2014)

Rubrique

Research Articles

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