Optimization of Indium Concentration for Obtaining Enhanced Performance of 980nm InxGa1-xAs/GaAs MQW VCSELs

著者

  • Rinku Basak Department of Electrical and Electronic Engineering, American International University-Bangladesh (AIUB), Banani, Dhaka-1213, Bangladesh.

キーワード:

VCSEL、 MQW、 output power、 modulation response

要旨

In this work, an optimization of Indium concentration of 980 nm InxGa1-xAs/GaAs MQW VCSELs is presented with the aim of improving dynamic performance of the VCSEL. An improved modulation performance is obtained by optimizing Indium concentration of x=0.2. A high modal gain and low transparency carrier density contributes to a high optical output power for In0.2Ga0.8As/GaAs MQW VCSEL. A highest modulation bandwidth of 11.625 GHz is obtained for In0.2Ga0.8As/GaAs MQW VCSEL at 7.4 mA injection current and 5.1x10-16 cm2 differential gain. By increasing the differential gain from 5.1x10-16 cm2 to 10x10-16 cm2 a maximum modulation bandwidth of 16.5 GHz is obtained for In0.2Ga0.8As/GaAs MQW VCSEL.   

著者略歴

  • Rinku Basak、 Department of Electrical and Electronic Engineering, American International University-Bangladesh (AIUB), Banani, Dhaka-1213, Bangladesh.
    Head, Graduate Program, Assistant Professor, Dept. of EEE, American International University-Bangladesh (AIUB)

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発行日

2013-08-29

巻号

巻 3 号 2 (2013)

セクション

Research Articles

ライセンス

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