Optimization of Power in SG-SOI Structure at 1550 nm for Nanophotonic Application

著者

  • Gopinath Palai Gandhi Institute for Technological Advancement image/svg+xml
  • S. K. Sahoo

キーワード:

SG-SOI、 PWE、 power

要旨

Optical power of semiconductor grating silicon-on-insulator (SG-SOI) at 1550 nm is investigated in this paper. The power of SG-SOI structure is calculated using plane wave expansion (PWE) method. Simulation result reveals that optical power is more than 99.9% in all SG-SOI structure. Simulation result shows that suitable combinations of grating layers play vital role to obtain high optical power. 

著者略歴

  • Gopinath Palai、 Gandhi Institute for Technological Advancement
    GITA,HOD

発行日

2013-08-29

巻号

セクション

Research Articles