High Reflectivity Semiconductor-glass Grating Structure for SOI Application
キーワード:
semiconductor-glass grating、 reflectance、 plane wave expansion method要旨
High reflectance of semiconductor-glass (GaAs-BSG, InP-FS, GaAs-FS, Ge-BK7, Ge-BSG) grating SOI structure at wavelength 1.55 μm is thoroughly investigated in this paper. Simulation result showed that, reflectivities are 99.01, 99.03, 99.20, 99.29 and 99.47% at wavelength 1.55 μm for GaAs-BSG, InP-FS, GaAs-FS, Ge-BK7, Ge-BSG grating SOI structure, respectively. This simulation is carried out using plane wave expansion method. Present simulation gives effective result as compared to existing result.
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