Optimization of Indium Concentration for Obtaining Enhanced Performance of 980nm InxGa1-xAs/GaAs MQW VCSELs

Авторы

  • Rinku Basak Department of Electrical and Electronic Engineering, American International University-Bangladesh (AIUB), Banani, Dhaka-1213, Bangladesh.

Ключевые слова:

VCSEL, MQW, output power, modulation response

Аннотация

In this work, an optimization of Indium concentration of 980 nm InxGa1-xAs/GaAs MQW VCSELs is presented with the aim of improving dynamic performance of the VCSEL. An improved modulation performance is obtained by optimizing Indium concentration of x=0.2. A high modal gain and low transparency carrier density contributes to a high optical output power for In0.2Ga0.8As/GaAs MQW VCSEL. A highest modulation bandwidth of 11.625 GHz is obtained for In0.2Ga0.8As/GaAs MQW VCSEL at 7.4 mA injection current and 5.1x10-16 cm2 differential gain. By increasing the differential gain from 5.1x10-16 cm2 to 10x10-16 cm2 a maximum modulation bandwidth of 16.5 GHz is obtained for In0.2Ga0.8As/GaAs MQW VCSEL.   

Биография автора

  • Rinku Basak, Department of Electrical and Electronic Engineering, American International University-Bangladesh (AIUB), Banani, Dhaka-1213, Bangladesh.
    Head, Graduate Program, Assistant Professor, Dept. of EEE, American International University-Bangladesh (AIUB)

Загрузки

Опубликован

2013-08-29

Выпуск

Том 3 № 2 (2013)

Раздел

Research Articles

Лицензия

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