Optimization of i-Layer of a-Si: H p–i–n Solar Cell in an Indigenously Developed PECVD System

Abstract

 Single-junction hydrogenated amorphous silicon solar cells have been successfully fabricated using indigenously developed radio frequency-plasma enhanced chemical vapor deposition (RF-PECVD) technique. The software-controlled PECVD system enables deposition and optimization of layers and solar cell device using a cluster 5 process chambers. In the present work, several experiments have been carried out by varying the critical process parameters in order to optimize the i-layers for obtaining efficient hydrogenated amorphous silicon (a-Si:H) p–i–n solar cell. The i-layer conductivity and band gap were found to have high influence on the efficiency of a-Si:H p–i–n solar cell in addition to the p and n-layer properties. Raman spectroscopy studies confirmed the presence of amorphous nature of the films. Single-junction thin film a-Si solar cells have been fabricated with a maximum efficiency of 5.22% (Voc=0.80 V, Jsc=0.01013A/cm², and FF=0.64). The i-layer has been optimized to a gain of order 10⁺⁵ (photoconductivity=10⁻⁵, darkconductivity=10⁻¹⁰) and band gap to a value of 1.73 eV.

Keywords: a:Si:H, dilution ratio, band gap, conductivity, PECVD

Cite this Article

Shilpa GD, Sreedhar Babu K, Subramanyam TK et al. Optimization of i-layer of a-Si:H p-i-n solar cell in an indigenously developed PECVD system. Journal of Instrumentation Technology and Innovations. 2015; 5(3): 32–36p.